近日，我院青年教师吕天帅博士(通讯作者)，在前期工作的基础上(1. T. Lyu* and P. Dorenbos, Vacuum referred binding energies of bismuth and lanthanide levels in ARE(Si,Ge)O₄ (A=Li, Na; RE=Y, Lu); towards designing charge carrier trapping processes for energy storage, Chemistry of Materials, 2020, 32, 1192-1209. 2. T. Lyu* and P. Dorenbos, Towards information storage by designing both electron and hole detrapping processes in bismuth and lanthanide-doped LiRE(Si,Ge)O4 (RE = Y, Lu) with high charge carrier storage capacity, Chemical Engineering Journal, 2020, 400, 124776.)，深入开展了稀土与铋离子掺杂LiLuGeO₄化合物长余辉发光方面的研究，最新成果近日发表于国际SCI期刊Materials Chemistry Frontiers。

                         论文链接：https://pubs.rsc.org/en/Content/ArticleLanding/2022/QM/D2QM01098D